FMY-1106S
κατασκευαστής:
Η Sanken Electric USA Inc.
Περιγραφή:
DIODE GEN PURP 600V 10A TO220F
Κατηγορία:
Ιδιαίτερα προϊόντα ημιαγωγών
Προδιαγραφές
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Obsolete
Current - Reverse Leakage @ Vr:
30 µA @ 600 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.15 V @ 10 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
TO-220F-2L
Reverse Recovery Time (trr):
200 ns
Δρ.:
Η Sanken Electric USA Inc.
Technology:
Standard
Θερμοκρασία λειτουργίας - Σύνδεσμος:
-40°C ~ 150°C
Package / Case:
TO-220-2 Full Pack
Η τάση - αντίστροφη συνεχής (Vr) (μέγιστη):
600 V
Current - Average Rectified (Io):
10A
ΓΙΑΡΙΑ:
Ταχεία ανάκτηση =< 500ns, > 200mA (Io)
Εισαγωγή
Δίοδος 600 V 10A μέσω τρύπας TO-220F-2L
Related Products
SJPB-H9VL
DIODE SCHOTTKY 90V 2A SJP
SJPL-H2VL
DIODE GEN PURP 200V 2A SJP
SJPB-H6VR
DIODE SCHOTTKY 60V 2A SJP
ΔΕΠ-G26S
DIODE GEN PURP 600V 10A TO220F
SARS01V1
DIODE GEN PURP 800V 1.2A AXIAL
SJPX-F2VR
DIODE GEN PURP 200V 1.5A SJP
SARS05VL
DIODE GEN PURP 800V 1A SMD
| Εικόνα | μέρος # | Περιγραφή | |
|---|---|---|---|
|
|
SJPB-H9VL |
DIODE SCHOTTKY 90V 2A SJP
|
|
|
|
SJPL-H2VL |
DIODE GEN PURP 200V 2A SJP
|
|
|
|
SJPB-H6VR |
DIODE SCHOTTKY 60V 2A SJP
|
|
|
|
ΔΕΠ-G26S |
DIODE GEN PURP 600V 10A TO220F
|
|
|
|
SARS01V1 |
DIODE GEN PURP 800V 1.2A AXIAL
|
|
|
|
SJPX-F2VR |
DIODE GEN PURP 200V 1.5A SJP
|
|
|
|
SARS05VL |
DIODE GEN PURP 800V 1A SMD
|
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