IXFK88N30P
Προδιαγραφές
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Gate Charge (Qg) (Max) @ Vgs:
180 nC @ 10 V
Rds On (Max) @ Id, Vgs:
40mOhm @ 44A, 10V
Τύπος FET:
N-Κανάλι
Drive Voltage (Max Rds On, Min Rds On):
10V
Πακέτο:
Κουτί
Drain to Source Voltage (Vdss):
300 V
Vgs (μέγιστο):
±20V
Product Status:
Active
Δυνατότητα εισόδου (Ciss) (Max) @ Vds:
6300 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar
Supplier Device Package:
TO-264AA (IXFK)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
88A (Tc)
Power Dissipation (Max):
600W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFK88
Εισαγωγή
Διάδρομος N 300 V 88A (Tc) 600W (Tc) μέσω τρύπας TO-264AA (IXFK)
Συγγενικά προϊόντα

IXFK120N20
MOSFET N-CH 200V 120A TO-264AA

IXFK27N80
MOSFET N-CH 800V 27A TO264AA

ΙΧFH20N80Q
MOSFET N-CH 800V 20A TO247AD

IXFH15N80
MOSFET N-CH 800V 15A TO247AD

IXFH26N50Q
MOSFET N-CH 500V 26A TO247AD

IXFH12N90
MOSFET N-CH 900V 12A TO247AD

IXFH13N50
MOSFET N-CH 500V 13A TO247AD

ΙΧFN32N120P
MOSFET N-CH 1200V 32A SOT-227B

ΙΧFN32N100Q3
MOSFET N-CH 1000V 28A SOT227B

ΙΧFN36N100
MOSFET N-CH 1KV 36A SOT-227B
Εικόνα | μέρος # | Περιγραφή | |
---|---|---|---|
![]() |
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
![]() |
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
![]() |
ΙΧFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
![]() |
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
![]() |
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
![]() |
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
![]() |
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
![]() |
ΙΧFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
![]() |
ΙΧFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
![]() |
ΙΧFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
Στείλετε το RFQ
Απόθεμα:
MOQ: