IXTH64N65X
κατασκευαστής:
ΙΧΥΣ
Περιγραφή:
MOSFET N-CH 650V 64A TO247
Κατηγορία:
Ιδιαίτερα προϊόντα ημιαγωγών
Προδιαγραφές
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Χαρακτηριστικό γνώρισμα FET:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
143 nC @ 10 V
Rds On (Max) @ Id, Vgs:
51mOhm @ 32A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5500 pF @ 25 V
Mounting Type:
Through Hole
Series:
Ultra X
Supplier Device Package:
TO-247 (IXTH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
64A (Tc)
Power Dissipation (Max):
890W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTH64
Εισαγωγή
Διάδρομος N 650 V 64A (Tc) 890W (Tc) Μέσα από την τρύπα TO-247 (IXTH)
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| Εικόνα | μέρος # | Περιγραφή | |
|---|---|---|---|
|
|
IXFK120N20 |
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IXFH15N80 |
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IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
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IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
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|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
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|
ΙΧFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
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|
ΙΧFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
ΙΧFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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