SQJ459EP-T1_GE3
κατασκευαστής:
Vishay Siliconix
Περιγραφή:
MOSFET P-CH 60V 52A PPAK SO-8
Κατηγορία:
Ιδιαίτερα προϊόντα ημιαγωγών
Προδιαγραφές
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
108 nC @ 10 V
Rds On (Max) @ Id, Vgs:
18mOhm @ 3.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4586 pF @ 30 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
52A (Tc)
Power Dissipation (Max):
83W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQJ459
Εισαγωγή
Διάδρομος P 60 V 52A (Tc) 83W (Tc) Επιφανειακή τοποθέτηση PowerPAK® SO-8
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| Εικόνα | μέρος # | Περιγραφή | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
ΣΥ7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
ΣΥ7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
ΣΥΡΙΖΑ: |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
ΣΥΣΑ72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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