ΣΥ2323CDS-T1-GE3
Προδιαγραφές
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Χαρακτηριστικό γνώρισμα FET:
-
Vgs(th) (Max) @ Id:
1V @ 250µA
Θερμοκρασία λειτουργίας:
-55 °C ~ 150 °C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
39mOhm @ 4.6A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1090 pF @ 10 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Power Dissipation (Max):
1.25W (Ta), 2.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI2323
Εισαγωγή
Π-Κανάλι 20 V 6A (Tc) 1.25W (Ta), 2.5W (Tc) Επιφανειακή τοποθέτηση SOT-23-3 (TO-236)
Συγγενικά προϊόντα

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ΣΥ7157DP-T1-GE3
MOSFET P-CH 20V 60A PPAK SO-8

IRFP21N60LPBF
MOSFET N-CH 600V 21A TO247-3

SIR880ADP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8

SIR873DP-T1-GE3
MOSFET P-CH 150V 37A PPAK SO-8

ΣΥΡΙΖΑ:
MOSFET N-CH 80V 60A PPAK SO-8

SUD50N04-8M8P-4GE3
MOSFET N-CH 40V 14A/50A TO252

ΣΥΣΑ72DN-T1-GE3
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Εικόνα | μέρος # | Περιγραφή | |
---|---|---|---|
![]() |
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
![]() |
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
![]() |
ΣΥ7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
![]() |
ΣΥ7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
![]() |
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
![]() |
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
![]() |
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
![]() |
ΣΥΡΙΖΑ: |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
![]() |
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
![]() |
ΣΥΣΑ72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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